Method of depositing diamond-like carbon film onto a substrate having a low melting temperature
US5171607A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 29, 1990 |
| Grant date | Dec 15, 1992 |
| Priority date | — |
| Expiry date | Jan 29, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B1/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A diamond-like carbon film is deposited on an insulating substrate using a solid carbon source evaporated by an electron beam so as to maintain the substrate temperature below about 150.degree. C. in a differentially evacuated chamber containing a selective etchant gas such as hydrogen. In orer to bombard the substrate with positively charged ions while preventing accumulation of a repulsive surface charge, a radio frequency (RF) electric field is applied to a rotating fixture holding the substrate. The differentially evacuated chamber maintains the atmospheric pressure around the solid carbon source at one end of the chamber at a sufficiently low pressure to prevent loss of electron beam energy and thereby enable vaporization of the carbon while maintaining the substrate at the other end of the chamber at a higher pressure which enables the RF electric field to excite an ion gas plasma around the substrate and thereby facilitate deposition of the diamond-like carbon film. In the preferred embodiment, the differentially evacuated chamber has a bypass manifold connected between the two ends of the chamber. A control system responding to pressure sensing apparatus inside the chamber …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.