Method for photo annealing non-single crystalline semiconductor films
US5171710A · kind A · utility
34Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 1990 |
| Grant date | Dec 15, 1992 |
| Priority date | — |
| Expiry date | May 9, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/093
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.