Piezoresistive semiconductor device suitable for use in a pressure sensor
US5172205A · kind A · utility
14Cited by
10References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 1990 |
| Grant date | Dec 15, 1992 |
| Priority date | — |
| Expiry date | Sep 24, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P15/123
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A piezoresistive device, in which separation grooves having a cross section defined by four (111) planes and including side walls of a silicon oxide film are formed in a surface area of a semiconductor substrate having a surface of (100) plane, and at least one piezoresistor having an inversed triangular cross section defined by one (100) plane and two (111) planes is formed in the surface area of the semiconductor substrate and is surrounded by the separation grooves for separating the piezoresistor from the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.