Method of manufacture of optically transparent electrically conductive semiconductor windows
US5173443A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 1990 |
| Grant date | Dec 22, 1992 |
| Priority date | — |
| Expiry date | Jun 27, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/934
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods are disclosed for making semiconductor windows which are transparent to light in the infrared range which have good electrical conductivity and are formed of a substrate material (11) having a semiconductor coating (14) having a dopant included therein. The coating is diffused, grown or deposited on one surface of the substrate and is controlled to obtain both low electrical resistivity and high infrared transmissivity. The coating can be formed of the same material as the substrate or can be a different material. Windows having particular thermal properties are formed utilizing zinc selenide and zinc sulfide as the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.