Semiconductor substrate manufacturing by recrystallization using a cooling medium
US5173446A · kind A · utility
43Cited by
11References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 13, 1991 |
| Grant date | Dec 22, 1992 |
| Priority date | — |
| Expiry date | Jun 13, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/905
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate comprises a foundation, a semiconductor monocrystalline film formed on the foundation, and a high-melting-point metal film or a high-melting-point metal alloy film disposed in at least part of a region between the semiconductor monocrystalline film and the foundation. The high-melting-point metal film disposed below the semiconductor monocrystalline film can be utilized as a conductor in a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.