Apparatus for forming a thin film on surface of semiconductor substrate
US5174881A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 1991 |
| Grant date | Dec 29, 1992 |
| Priority date | — |
| Expiry date | Jun 28, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/0236
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of and an apparatus for removing a naturally grown oxide film and contaminants on the surface of a semiconductor substrate and then forming a thin film on the cleaned surface. The semiconductor substrate is placed in a pretreatment chamber and then hydrogen chloride gas is introduced into the chamber. Then, the semiconductor substrate is heated at a temperature between 200.degree..about.700.degree. C. and the surface of the semiconductor substrate is irradiated with ultraviolet rays, whereby the naturally grown oxide film and other contaminants on the semiconductor substrate can be removed. Then, a thin film is formed on the cleaned surface of the semiconductor substrate by a CVD method or a sputter method. According to this method, the naturally oxide film and other contaminants can be removed from the surface of the semiconductor substrate at a low temperature and the thin film can be formed on the cleaned surface. As a result, an interface structure between the semiconductor substrate and the thin film can be controlled to be in a preferable state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.