Wide percentage bandwidth microwave filter network and method of manufacturing same
US5175518A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 15, 1991 |
| Grant date | Dec 29, 1992 |
| Priority date | — |
| Expiry date | Oct 15, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2001/0085
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high percentage bandwith microwave filter network, according to an embodiment of the present invention, comprises a T-network of capacitors implemented with thin-film techniques by applying a groundplane to one side of an alumina substrate and a first plate to the other side. A silicon nitride dielectric layer having a high density of capacitance is deposited over the first plate, and then a second and third capacitor plate are deposited on the dielectric over the first plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.