Light receiving PN junction semiconductor device with silicon nitride film
US5177581A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 1991 |
| Grant date | Jan 5, 1993 |
| Priority date | — |
| Expiry date | Nov 12, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/306
Abstract
A light receiving semiconductor device includes a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the substrate, isolation regions of the first conductivity type for separating the second conductivity type semiconductor layer into a plurality of islands, at least one of the second conductivity type islands and the first conductivity type substrate constituting a light receiving element, an anti-reflection film covering at least the entire surface of the island of the light receiving element, and a first conductivity type layer formed between the anti-reflection film and the second conductivity type island and extending to the first conductivity type isolation region surrounding the island of the light receiving element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.