P-N-P diamond transistor
US5177585A · kind A · utility
1Cited by
8References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 23, 1991 |
| Grant date | Jan 5, 1993 |
| Priority date | — |
| Expiry date | Sep 23, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/60
Abstract
The present invention provides a P-N-P diamond transistor and a method of manufacture thereof. The transistor comprises a diamond substrate having two p-type semiconducting regions separated by an insulating region with an n-type semi-conducting layer established by chemical vapour deposition. Preferably the p-type regions are obtained by doping with boron and controlling the concentration of nitrogen impurities by the use of nitrogen getters. The n-type layer preferably contains phosphorus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.