Capacitor-carrying semiconductor module
US5177670A · kind A · utility
193Cited by
12References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 1992 |
| Grant date | Jan 5, 1993 |
| Priority date | — |
| Expiry date | Feb 7, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/924
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Noise generated at high frequencies at the time of simultaneous switchings of logical circuits is reduced by lowering an inductance from LSI to a capacitor formed on a substrate. The capacitor is formed to ensure that an inductance from a bonding pad for the LSI loaded on the substrate to an electrode of the capacitor is 0.05 nanohenry. The lower inductance from the LSI to the capacitor allows a reduction in the amount of the noise at high frequencies among those generated in power supply system, whereby the rising time of signals is made shorter, and the speed of arithmetic operation can be increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.