Semiconductor laser device with plural active layers and changing optical properties
US5177758A · kind A · utility
31Cited by
5References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 6, 1991 |
| Grant date | Jan 5, 1993 |
| Priority date | — |
| Expiry date | Dec 6, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3434
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A wavelength-tunable semiconductor laser device presenting a large wavelength-tunable range or a very-high-speed modulating semiconductor laser device having a distributed feedback structure including a diffraction grating as in the case of a DBR laser or a DFB laser incorporates therein a plurality of active layers differing from one another in constituent elements or composition ratio or thickness for reducing spectral line widths, while improving single-mode spectral oscillation characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.