Conductivity modulated insulated gate semiconductor device
US5178370A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 1991 |
| Grant date | Jan 12, 1993 |
| Priority date | — |
| Expiry date | Aug 5, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
Abstract
A vertical conducting insulating gate bipolar transistor having an emitter region formed in a base region wherein the base region is not shorted to the emitter is provided. The emitter and base regions are formed in an upper portion of a lightly doped semiconductor drift region and an anode region is formed in a bottom portion of the drift region. During forward conduction, minority carriers are injected from the anode into the base region, biasing the base region sufficiently to inject minority carriers into the upper surface of the drift region. The injected minority carriers improve conductivity in the upper portion of the drift region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.