Manufacturing method of an X-ray exposure mask
US5178977A · kind A · utility
12Cited by
6References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 18, 1990 |
| Grant date | Jan 12, 1993 |
| Priority date | — |
| Expiry date | Jan 18, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing an X-ray exposure mask comprises steps of forming a membrane including a layer of crystalline silicon carbide on a silicon substrate, processing a top surface of the membrane such that the top surface becomes a mirror-flat top surface, depositing a layer of X-ray absorbing material on the mirror-flat top surface of the membrane, and patterning the layer of the X-ray absorbing material according to a desired semiconductor pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.