Process for forming deposited film by use of alkyl aluminum hydride
US5179042A · kind A · utility
32Cited by
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21Claims
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Key dates
| Filing date | Sep 7, 1990 |
| Grant date | Jan 12, 1993 |
| Priority date | — |
| Expiry date | Sep 7, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/937
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for forming an Al film of good quality according to the CVD method utilizing the reaction between alkyl aluminum hydride and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of A1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.