Semiconductor laser device, method of fabricating the same and optical system of utilizing the same
US5179567A · kind A · utility
14Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 8, 1991 |
| Grant date | Jan 12, 1993 |
| Priority date | — |
| Expiry date | Feb 8, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device may include a structure formed separately of a light radiating region, and an electrode for injecting carriers over the light radiating region. A gap is formed between the light radiating region and the structure to introduce an air-bridge structure into the aforementioned electrode so that the capacitive component resulting from a presence of the electrode is drastically reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.