Deposition of highly-oriented PTFE films and uses therefor
US5180470A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1989 |
| Grant date | Jan 19, 1993 |
| Priority date | — |
| Expiry date | Jun 5, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/919
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
Broadly the invention is a method for forming a highly-oriented crystal structure on a substrate in a known orientation comprising the steps of forming a film of highly-oriented poly(tetrafluoroethylene) with an orientation angle of less than 20.degree. on a surface of the substrate with its nominal orientation director along a desired orientation director and then depositing a crystal-forming material on the highly-oriented poly(tetrafluoroethylene) to form the structure. Specific examples include a method for growing a highly-oriented crystal on filament substrates, a method for producing extruded polymer articles (fibers, tapes, and solids) containing oriented crystal growth to improve the characteristics thereof, and a method for storing and retrieving data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.