PIN diode with a low peak-on effect
US5181083A · kind A · utility
11Cited by
5References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 15, 1991 |
| Grant date | Jan 19, 1993 |
| Priority date | — |
| Expiry date | Jul 15, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/60
Abstract
A PIN diode with a low voltage peak at the switching on comprises a P-type anode region (4) formed on a first surface of a low doped N-type substrate (1) and a cathode region (2) formed on the second surface of the substrate. The PIN diode comprises on a portion of the first surface an additional N.sup.+ -type region (7) in contact with the anode region for forming a junction with the latter. The additional region is connected to the cathode region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.