Process for producing high density SiC sintered bodies
US5182059A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 1992 |
| Grant date | Jan 26, 1993 |
| Priority date | — |
| Expiry date | Jun 15, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B35/575
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A process for producing high density SiC sintered bodies by primarily firing and then hot isostatic pressing. The process includes the steps of formulating a powder consisting essentially of 90.0 to 99.8% by weight of the SiC powder, boron or a boron-containing compound in an amount of 0.1 to 5.0% by weight when calculated as boron, and carbon or a carbon-producing organic compound in an amount of 0.1 to 5.0% by weight when calculated as carbon, mixing and shaping the formulated powder, firing the shaped bodies in a temperature range from 1,900.degree. to 2,300.degree. C. in vacuum or in an inert gas atmosphere, and then hot isostatically pressing the fired bodies in a temperature range from 1,800.degree. to 2,200.degree. C. under a pressure of not less than 100 atms in an inert gas atmosphere. The SiC powder is an SiC mixed powder consisting essentially of 95.0 to 99.9% by weight of a first SiC powder composed of at least one kind of 3C and 2H polytypes and a second SiC powder composed of at least one kind of 6H, 4H and 15R polytypes and having an average grain diameter being less than twice that of the first SiC powder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.