Method of developing a self-developing resist
US5182188A · kind A · utility
9Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1990 |
| Grant date | Jan 26, 1993 |
| Priority date | — |
| Expiry date | Jun 29, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/146
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Self-developing photoresists are developed by exposing the substrate on which they are exposed to a light beam or other energy source which is absorbed by the substrate and which raises the substrate temperature to the thermal decomposition temperature of the overlying photoresist. This exposure may be done through the photoresist layer with a light beam having a frequency to which the photoresist is substantially transparent or may be done from the backside of the substrate using a light beam which is absorbed by the substrate itself if it is sufficiently thin, or by a thin layer disposed on a transparent substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.