Patent · US Expired

Method of forming a high temperature resistant copper coating on an inorganic dielectric

US5183553A · kind A · utility

2Cited by

2References

6Claims

0Family size

Assignee

SCHERING CORPORATION · US

Inventors

Detlef Tenbrink · Berlin, DE
Martin Bock · Berlin, DE
Kurt Heymann · Berlin, DE
Martin Rimkus · Berlin, DE

Key dates

Filing date	Jul 13, 1989
Grant date	Feb 2, 1993
Priority date	—
Expiry date	Jul 13, 2009

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S205/917
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

The method of forming a high temperature resistant copper coating on a ceramic and/or enamel substrate, includes the steps of chemically depositing a copper layer having a thickness of at least 3 .mu.m on the substrate, heating the copper layer formed thereon at a temperature of from 200.degree. to 450.degree. C., mechanically treating the copper layer with brush and polishing means to consolidate an upper surface thereof and galvanically depositing an additional copper layer having a thickness of 3 .mu.m on the upper surface. The high temperature resistant copper coating for the ceramic or enamel substrate can stand a higher thermal load for a longer time than similar conventional coatings and can act to rapidly dissipate heat generated by electronic components.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.