Magnetic field sensor with improved electron mobility
US5184106A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1991 |
| Grant date | Feb 2, 1993 |
| Priority date | — |
| Expiry date | Jan 28, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/85
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A magnetic field sensor, such as a magnetoresistor, having improved electron mobility comprises a substrate of an insulating semiconductor material, such as gallium arsenide or indium phosphide, having on a surface thereof a narrow strip of a thin active film. The active film has a thin first layer of undoped or lightly doped high electron mobility semiconductor material, such as indium antimonide or indium arsenide, on the substrate surface, and a second layer of the semiconductor material, which may be thicker than the first layer, on the first layer. The second layer is at least partially doped n-type conductivity so as to have a high electron density. The second layer may be entirely of the n-type conductivity semiconductor material or a superlattice of alternating layers of n-type conductivity and intrinsic semiconductor materials or a superlattice of intrinsic semiconductor material and a ternary or quaternary alloy of the semiconductor material which is at least partially of n-type conductivity. A conductive contact is on the active film at the ends thereof. For a magnetoresistor, a plurality of conductive shorting bars are on and spaced along the strip of the active film ma…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.