Silicon carbide semiconductor device
US5184199A · kind A · utility
81Cited by
6References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1990 |
| Grant date | Feb 2, 1993 |
| Priority date | — |
| Expiry date | Jun 5, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6741
Abstract
A silicon carbide semiconductor device is disclosed which includes a semiconductor substrate and a silicon carbide single-crystal layer formed above the substrate, the silicon carbide single-crystal layer having a device active region. The silicon carbide semiconductor device further includes an aluminum nitride single-crystal layer which is disposed between the silicon carbide single-crystal layer and the substrate. The aluminum nitride single-crystal layer functions as an electrically insulating layer by which the silicon carbide signale-crystal layer is isolated electrically from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.