Remover solution for photoresist
US5185235A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 1990 |
| Grant date | Feb 9, 1993 |
| Priority date | — |
| Expiry date | Mar 30, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/425
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The remover solution of the invention comprises (A) from 35 to 80% by weight of an alcoholic solvent such as ethylene glycol monoethyl ether, (B) from 10 to 40% by weight of an organic solvent which is a halogenated hydrocarbon solvent, e.g., 1,2-dichlorobenzene and methylene chloride, an ether solvent, e.g., tetrahydrofuran, or an aromatic solvent, e.g., benzene and xylene, and (C) from 0.1 to 25% by weight of a quaternay ammonium compound such as tetramethyl ammonium hydroxide and trimethyl hydroxyethyl ammonium hydroxide. Different from conventional remover solutions which only can swell cured photoresist compositions, the inventive remover solution has a power to completely dissolve a cured photoresist layer to give a quite satisfactory result in the removing works of patterned photoresist layers in the manufacture of semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.