Method of producing semiconductor device having light receiving element with capacitance
US5185272A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 1991 |
| Grant date | Feb 9, 1993 |
| Priority date | — |
| Expiry date | Nov 18, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
A semiconductor device includes a substrate, a first layer formed on the substrate and made of a semiconductor of a first conductive type, a second layer formed on the first layer and functioning as a photoabsorption layer, a third layer formed on the second layer and made of a semiconductor of the first conductive type, a plurality of regions formed in the third layer and made of a semiconductor of a second conductive type opposite to the first conductive type thereby forming a plurality of pin diodes, where each of the regions at least reaches the second layer, and a plurality of electrodes respectively formed on the regions and made of the same electrode material. A first electrode of the plurality of electrodes receives a positive voltage to forward bias a first pin diode of the plurality of pin diodes and a second electrode of the plurality of electrodes receives a negative voltage to reverse bias a second pin diode of the plurality of pin diodes so that the second pin diode operates as a pin photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.