Method of forming and aligning patterns in deposted overlaying on GaAs
US5185293A · kind A · utility
20Cited by
8References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 10, 1992 |
| Grant date | Feb 9, 1993 |
| Priority date | — |
| Expiry date | Apr 10, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/951
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method is described for forming patterns in deposited overlayers on GaAs and for aligning the formed patterns with etch features produced through dry processing. The deposited overlayers on GaAs are protected during pattern formation and subsequent processing by a durable, process integrable mask of hydrogenated amorphous carbon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.