Mixture thin film forming apparatus
US5186120A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 1991 |
| Grant date | Feb 16, 1993 |
| Priority date | — |
| Expiry date | Dec 4, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention is directed to a mixture thin film forming apparatus for accumulating gasified components on a substrate which is arranged in a reaction chamber. According to the present invention, respective components of a gas supply system, which are different in heat capacity from each other, are independently controlled in their temperatures by temperature control parts respectively, so that the respective components can be adjusted to desired temperatures. Thus, the gas supply system is prevented from deviation of temperature distribution, whereby the overall gas supply system can be adjusted within a prescribed temperature range. Thus, raw materials are prevented from precipitation, irregular reaction or the like, to enable stable gas supply.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.