MOCVD method and apparatus
US5186756A · kind A · utility
27Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 9, 1991 |
| Grant date | Feb 16, 1993 |
| Priority date | — |
| Expiry date | Dec 9, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In an MOCVD reactor, gases are channeled around the periphery of a baffle plate (15) so as to flow radially inwardly along a slotted injection plate (16). The slots (22) in the injection plate extend radially and are of non-uniform width so as to compensate for a non-uniform rate of deposition. The resultant flow over a rotating heated substrate (17) gives a more uniform deposit of epitaxially grown material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.