Photoresists formed by polymerization of di-unsaturated monomers
US5187048A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 1991 |
| Grant date | Feb 16, 1993 |
| Priority date | — |
| Expiry date | Aug 28, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/039
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist coating for use in microlithography comprises a polymer of a monomer of the formula ##STR1## wherein X and Y are strong electron withdrawing groups and R.sup.4 is H or, providing that X and Y are both --CN, R.sup.4 may be aliphatic hydrocarbyl, aryl or alkaryl. Preferred monomers are of the formula ##STR2## wherein R.sup.7 is a C.sub.1 -C.sub.5 alkyl or C.sub.2 -C.sub.5 alkenyl group, more particularly ethyl 2-cyanopenta-2,4-dienoate or allyl 2-cyanopenta-2,4-dienoate. Methods for applying a resist coating by vapor deposition of these monomers and exposure to radiation are described. A positive or negative tone image can be produced, depending upon the imaging method employed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.