Shielded field-effect transistor devices
US5187552A · kind A · utility
27Cited by
8References
99Claims
0Family size
Inventors
Key dates
| Filing date | Feb 26, 1991 |
| Grant date | Feb 16, 1993 |
| Priority date | — |
| Expiry date | Feb 26, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Field-effect transistor devices are provided having a relatively substantial capability to withstand reverse bias voltages. This capability is provided through providing shields in these devices near junctions in such devices which are subject to breakdown under large reverse bias voltages, those shields being operable at selected voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of a geometrical design choice. A method for fabricating one such device is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.