Dielectric device
US5187636A · kind A · utility
24Cited by
5References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 21, 1992 |
| Grant date | Feb 16, 1993 |
| Priority date | — |
| Expiry date | Apr 21, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/30
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Si regions separated from a Si-rich SiO.sub.2 film are nitrided to provide a film mainly consisting of SiO.sub.2 regions an Si.sub.3 N.sub.4 regions to be used for constituting a dielectric device or a capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.