Hydrostatic pressure transducer
US5187984A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 1991 |
| Grant date | Feb 23, 1993 |
| Priority date | — |
| Expiry date | Apr 26, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/045
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A monolithic pressure and/or temperature transducer comprises at least two sensitive semiconductor layers of III-V material sensitive to pressure and to temperature and supported by a common substrate of III-V material, which two layers comprise: a first layer doped with donor type impurities at a first concentration and having a first resistivity as a function of pressure and of temperature; and a second layer doped with donor type impurities at a second concentration different from the first concentration and having a second resistivity as a function of pressure and of temperature, which second resistivity depends on temperature in a different manner than the first resistivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.