Uniform gas flow CVD apparatus
US5188058A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 22, 1992 |
| Grant date | Feb 23, 1993 |
| Priority date | — |
| Expiry date | Jun 22, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/481
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A CVD apparatus comprising a reaction chamber in which reaction gas is supplied from above the substrate supported on the susceptor plate and exhausted uniformly from a plurality of circumferentially spaced gas exits, and infrared light heats the substrate from below the substrate via an infrared light transparent window arranged between the source of infrared light and the susceptor plate. A second infrared light transparent window with a central opening is arranged between the first infrared light transparent window and the susceptor plate. Nitrogen gas or an inert gas is supplied from a portion between the first and second infrared light transparent windows and flows through a plurality of circumferentially spaced gas passages arranged at the juncture of the susceptor plate and the peripheral wall of the reaction chamber to the gas exits. The gas passages are coordinated with the gas exits so that the flow of the reaction gas is less disturbed by the flow of the second gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.