Method of bonding metals, and method and apparatus for producing semiconductor integrated circuit device using said method of bonding metals
US5188280A · kind A · utility
82Cited by
5References
31Claims
0Family size
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Key dates
| Filing date | Dec 23, 1991 |
| Grant date | Feb 23, 1993 |
| Priority date | — |
| Expiry date | Dec 23, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique for producing a chip mount type package or a TAB package with high reliability, without use of a flux which would cause environmental pollution or would hinder an enhancement of reliability, more particularly pertains to a method of irradiating bonding surfaces, for which a solder is used, and solder bump electrodes of a package with an atomic or ion energy beam, and bonding the bonding surfaces to each other under normal pressure (about 1 atm) in a continuous apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.