Avalanche photodiode with AliNAsP cap layer
US5189309A · kind A · utility
6Cited by
3References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 1991 |
| Grant date | Feb 23, 1993 |
| Priority date | — |
| Expiry date | Jul 8, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
A photodiode having a GaInAs light-absorbing layer on an InP substrate which can reduce temperature dependence of the spectral responsivity as well as enable the optical power measurement with less dependence on the incident light spectral width by using a material with smaller composition ratio of Ga for the light-absorbing layer to extend the absorption edge toward the longer wavelengths.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.