Magnetoresistor using a superlattice of GaAs and AlGaAs
US5189367A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 1991 |
| Grant date | Feb 23, 1993 |
| Priority date | — |
| Expiry date | Nov 21, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/093
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A superlattice comprising alternating layers of undoped GaAs and silicon doped Al.sub.0.3 Ga.sub.0.7 As is used as a magnetoresistor for measuring magnet fields in excess of one Tesla. The magnetic field to be measured is passed vertically through the superlattice and current from a source of constant current is flowed vertically through the resulting superlattice and the voltage drop across the superlattice is measured to provide an indication of the strength of the magnetic field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.