Strained quantum well laser for high temperature operation
US5189679A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 1991 |
| Grant date | Feb 23, 1993 |
| Priority date | — |
| Expiry date | Sep 6, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser having increased reliability and enhanced high temperature operation. The device is based upon GaAs/AlGaAs, and comprises a quantum well active layer that is strained by the inclusion of the indium. The rear facet of the device has a high reflectivity coating, and the front facet reflectivity and cavity length are adjusted based upon the required output power. For high output power at high temperature, long cavity lengths and low front facet reflectivities are used. For low current operation and low output power at high temperature, shorter cavities and higher front facet reflectivities are used. The lasers are capable of reliably operating at temperatures up to and in excess of 100.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.