Visible light laser diode
US5189680A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 4, 1991 |
| Grant date | Feb 23, 1993 |
| Priority date | — |
| Expiry date | Sep 4, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/013
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser diode producing visible light includes GaInP, AlGaInP system layers and an undoped GaInP active layer, successively grown on a GaAs substrate in a first growth step, a stripe-shaped mesa formed by etching portions of the layers, and GaInP, AlGaInP system layers grown in subsequent growth steps. At least one of the layers formed in the first growth step has a lattice mismatch in a range of 2.times.10.sup.-3 .about.1.times.10.sup.-2 or -5.times.10.sup.-3 .about.-2.times.10.sup.-2 relative to the GaAs substrate. Therefore, a crystalline distortion is produced in layers other than the active layer and the diffusion of zinc into the undoped GaInP active layer is suppressed. As a result, a laser diode having improved characteristics is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.