Method for making an integrated light guide detector structure made of a semiconductive material
US5190883A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 1991 |
| Grant date | Mar 2, 1993 |
| Priority date | — |
| Expiry date | May 16, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/065
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Method for making an integrated guide/detector structure made of a semiconductive material. This method consists of epitaxially growing on a semiconductor (2, 1) a lower confinement semiconductive film (4), a semiconductive guide film (6) and an upper semiconductive confinement film (8) with the same type of conductivity, the guide film being inserted between the confinement films having a prohibited band of energy smaller than that of the confinement films, of etching the upper film so as to form a guide strip with one extremity defining a first step (12) ending by a lateral broadening (28a) inside a plane parallel to the epitaxial films, of etching the released guide film so as to form a second step (16) adjacent to the first step, of epitaxially growing a semiconductive detector film (18) with this type of conductivity whose prohibited band of energy is smaller than that of the confinement films and the guide film, of eliminating that portion of the detective film covering the guide strip, and of forming the detector in the detecting film opposite the steps so as to embody a butt coupling between the guide film and the detector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.