Chemical vapor deposition of aluminum films using dimethylethylamine alane
US5191099A · kind A · utility
12Cited by
12References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 5, 1991 |
| Grant date | Mar 2, 1993 |
| Priority date | — |
| Expiry date | Sep 5, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F5/069
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
This invention provides essentially pure dimethylethylamine alane, which is useful for the chemical vapor deposition of thin films of aluminum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.