Quantum mechanical semiconductor device with electron/hole diffractive grating
US5191216A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 1991 |
| Grant date | Mar 2, 1993 |
| Priority date | — |
| Expiry date | Jul 18, 2011 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A solid state, quantum mechanical electron/hole wave device in the form of a switch or multiplexor includes a layer of semiconductor material supporting substantially ballistic electron/hole transport and a periodic grating structure formed in the layer of semiconductor material, with the grating structure comprising a modulation in electron/hole potential energy and/or effective mass. Preferably, means are provided for applying and varying the grating modulation. By constructing the device to divide the input substantially completely into two output beams (to operate in the Bragg regime), a useful switch is provided. Likewise, by constructing the device to divide the input into a selected number of three or more output beams (to operate in the Raman-Nath regime), a useful multiplexor is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.