Semiconductor device having an inter-layer insulating film disposed between two wiring layers
US5191402A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 1990 |
| Grant date | Mar 2, 1993 |
| Priority date | — |
| Expiry date | Jun 1, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, first insulating film carried on the substrate, first wiring layer carried on the first insulating film and an interlayer insulating film overlying the first wiring layer and first insulating film. The interlayer insulating film has a top portion overlying the first wiring layer and a pair of sidewall portions. The sidewall portions of the interlayer insulating film overlie the first insulating film and the sides of the first wiring layer. The sidewall portions have progressively increasing width in progressing towards the substrate. The device also includes a second wiring layer which extends from overlying part of the top portion of the interlayer insulating film to and in contact with an exposed portion of the substrate adjacent to the first insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.