Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices
US5191510A · kind A · utility
109Cited by
22References
26Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 29, 1992 |
| Grant date | Mar 2, 1993 |
| Priority date | — |
| Expiry date | Apr 29, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
A ferroelectric capacitor for a ferroelectric memory device includes a substrate, a silicon dioxide layer, a palladium adhesion layer, a bottom electrode of platinum, a metal or an alloy, a ferroelectric material and a top electrode of platinum, a metal or an alloy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.