Manufacturing method of a probe head for semiconductor LSI inspection apparatus
US5191708A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1991 |
| Grant date | Mar 9, 1993 |
| Priority date | — |
| Expiry date | Jun 7, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49155
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a manufacturing method of a probe head for an inspection apparatus of a semiconductor device represented by an LSI, and more particularly to a manufacturing method suitable for forming probes with high accuracy in forming into multipins at high density, and is characterized in that a structure is obtained, in which a probe forming conductive lower layer is formed on a formed conductive attaching layer for improving attaching strength after forming electrode pads on a wiring substrate, a mask pattern for forming a probe tip forming conductive upper layer is formed at a position corresponding to the probe position is removed by etching in a cylindrical form until the probe forming conductive lower layer is exposed, a probe tip forming conductive upper layer is grown at the position where etching removal has been performed, a mask pattern is removed, a mask pattern which covers a probe tip forming conductive upper layer is formed thereafter at a position corresponding to the probe position, and the probe forming conductive lower layer is removed by etching in a cylindrical form until the conductive attaching layer is exposed, and pin tips are formed as…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.