Method for producing semiconductor device
US5192680A · kind A · utility
8Cited by
2References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1989 |
| Grant date | Mar 9, 1993 |
| Priority date | — |
| Expiry date | Jun 2, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/975
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a semiconductor device containing steps of forming a stepped pattern on the surface of a semiconductor substrate and forming a gaseous grown crystal layer thereon, which comprises positioning an alignment pattern (for example 6c) included in the first-mentioned pattern diagonally with respect to an in-plane direction of faster pattern growth in said gaseous crystal growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.