Method of making a semiconductor laser with a liquid phase epitaxy layer and a plurality of gas phase or molecular beam epitaxy layers

US5192710A · kind A · utility

Assignee

• Alcatel N.V. · NL

Inventor

• Michael Schilling · Stuttgart, DE

Key dates

• Filing date: Apr 30, 1991
• Grant date: Mar 9, 1993
• Expiry date: Apr 30, 2011

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/32391
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A semiconductor laser which comprises a grating, a waveguide layer applied to the grating by LPE, and a plurality of layers disposed above the waveguide layer. This laser is characterized in that the layers disposed on the waveguide layer are applied with the aid of gas phase epitaxy or molecular beam epitaxy. Particularly preferred are MOVPE, MOMBE, GSMBE and CBE. Since the waveguide layer is applied with the aid of LPE directly onto the grating, the grating characteristics can be precisely predetermined. They remain intact during the application of the waveguide layer. The subsequent layers may be very thin. In particular, a very thin active layer or an MQW structure may be applied as the active layer. A buffer layer is provided between the waveguide layer and the active layer. A cladding layer and a ternary or quaternary contact layer lie above the active layer.