Electric device utilizing antioxidation film between base pad for semiconductor chip and organic encapsulating material
US5192995A · kind A · utility
6Cited by
5References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 1991 |
| Grant date | Mar 9, 1993 |
| Priority date | — |
| Expiry date | Feb 14, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved electric device and manufacturing method for the same are described. The device is for example an IC chip clothed with moulding. In advance of the moulding process, the rear surface of lead frame of the IC chip is cleaned and coated with an antioxidation film made of silicon nitride in order to avoid the oxidation of the lead frame. The antioxidation film ensures the connection of the moulding and the lead frame and protect the IC chip from moisture invaded through cracks or gaps. The coating of silicon nitride is carried out after cleaning the lead frame.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.