Semiconductor film and process for its production
US5194398A · kind A · utility
79Cited by
3References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 6, 1992 |
| Grant date | Mar 16, 1993 |
| Priority date | — |
| Expiry date | Feb 6, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an amorphous semiconductor film, which comprises (a) a film-forming step of forming a semiconductor film having not more than 20 atomic percent of bound hydrogen to a thickness of 3 to 1000 .ANG., and (b) a modifying step of modifying the formed film, the steps being repeated multiple times.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.