Apparatus for process for growing crystals of semiconductor materials
US5196173A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 1989 |
| Grant date | Mar 23, 1993 |
| Priority date | — |
| Expiry date | Oct 12, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1052
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In apparatuses for melting semiconductor material and growing single crystals of semiconductor material, the apparatus comprising: PA0 (a) a furnace, PA0 (b) a cylindrical double crucible assembly comprising an inner crucible in which single crystals of semiconductor material are grown at a vertical-concentric line thereof, the inner crucible having an upper part and a lower part, and an outer crucible in which melted semiconductor material is received, the outer crucible having the inner crucible disposed therein, PA0 (c) a susceptor for supporting the outer crucible, PA0 (d) rotating means for rotating the susceptor, PA0 (e) a feed pipe for supplying starting material in the space formed between the inner and the outer crucibles, PA0 (f) fluid-passage means for permitting the melted semiconductor material to flow between the inner and outer crucibles, the fluid-passage means being disposed at the lower part of the inner crucible, and PA0 wherein the inner crucible being set inside the outer crucible in a separable manner, the apparatus improved comprising: PA0 (g) joining means for setting the inner crucible inside the outer crucible concentrically, the joining means being dispos…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.