Patent · US Expired

Integrated magnetic field sensor

US5196821A · kind A · utility

36Cited by
8References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 9, 1992
Grant dateMar 23, 1993
Priority date
Expiry dateMar 9, 2012

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N50/10

Abstract

A magnetic field sensor, such as a magnetoresistor, includes a strip of a layer of a high electron mobility semiconductor whose electrical characteristics vary when a magnetic field is applied thereto on the surface of a body (substrate) of an insulating layer. Conductive contacts are on the strip at the ends thereof and conductive shorting bars are on and spaced along the strip to divide the strip into active regions. The body is mounted on a permanent magnet assembly which includes a magnet and a layer of a ferromagnetic material with the ferromagnetic material extending over the strip. The ferromagnetic layer is in close proximity to only the strip and, more preferably, to only the active regions of the strip so as to confine the magnetic field to the strip.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.