Method for fabricating buttable epitaxial infrared detector arrays by dimensionally controlled cleaving of single crystal substrates
US5198069A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 1989 |
| Grant date | Mar 30, 1993 |
| Priority date | — |
| Expiry date | Dec 4, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention provides a method for fabricating buttable infrared detector arrays by dimensionally controlled cleaving of a single crystal wafer substrate having well defined cleavage planes. The single crystal wafer substrate is first cleaved along its natural cleavage planes so as to form a plurality of cleavage lines defining rectangular detector array regions. A layer of infrared sensitive material is epitaxially grown on the cleaved single crystal wafer substrate. Infrared detector arrays are fabricated on the layer of infrared sensitive material within the rectangular detector array regions defined by the cleavage lines on the single crystal wafer substrate. The fabricated infrared detector arrays are then separated at the cleavage lines so as to form individual buttable infrared detector arrays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.